Charge transition level of GePb1 centers at interfaces of SiO2/GexSi1-x/SiO2 heterostructures investigated by positron annihilation spectroscopy

O. Madia, N. Segercrantz, V. Afanas’ev, A. Stesmans, L. Souriau, J. Slotte, F. Tuomisto, Phys. Stat. Sol. 251, 2211 (2014).