Impact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO2/GexSi1-x/SiO2/(1 0 0)Si structures with nm-thin GexSi1-x layers

O. Madia , A.P.D. Nguyen, N.H. Thoan, V. Afanas’ev, A. Stesmans, L. Souriau, J. Slotte, F. Tuomisto, Appl. Surf. Sci. 291, 11 (2014).