WG4 Publications Archive

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Defects at Oxide Surfaces

Springer Series in Surface Sciences, Ed. J. Jupille, G. Thornton, Springer International Publishing,  58 (2015).

Facet-Dependent Electron Trapping in TiO2 Nanocrystals

S. K. Wallace and K. P. McKenna, J. Phys. Chem. C 119, 1913 (2015).

Oxygen Atom Exchange Between Gaseous CO2 and TiO2 Nanoclusters

S. Civis, M. Ferus, M. Zukalova, A. Zukal, L. Kavan, J. Phys. Chem. C 119, 3605 (2015).

Band alignment and effective work function of atomic-layer deposited VO2 and V2O5 films on SiO2 and Al2O3

F. Cerbu, H.-S. Chou, I. P. Radu, K. Martens, A. P. Peter, V. V. Afanas’ev, and A. Stesmans, Phys. Stat. Sol. C 12, 238 (2014).

Facet Dependent Electron Trapping in TiO2 Nanocrystals

S. Wallace, K. P. McKenna, J. Phys. Chem. C 119, 1913 (2015).

Confinement effects for the F center in non-stoichiometric BaZrO3 ultrathin films

M. Arrigoni, E. Kotomin, D. Gryaznov, J. Maier, Phys. Stat. Sol. B 252, 139 (2015).

Spontaneous and Photoinduced Conversion of CO2 on TiO2 Anatase (001)/(101) Surfaces

M. Ferus, L. Kavan, M. Zukalova, A. Zukal, M. Klementova, and S. Civis, J. Phys. Chem. C 118, 26845 (2014).

From Monomer to Monolayer: a Global Optimisation Study of (ZnO)n Nanoclusters on the Ag Surface

I. Demiroglu, S. M. Woodley, A. A. Sokol and S. T. Bromley, Nanoscale 6, 14754 (2014).

Generation of Si dangling bond defects at Si/insulator interfaces induced by oxygen scavenging

F. Cerbu, A. P. D. Nguyen, J. Kepa, V. V. Afanas’ev, and A. Stesmans, Phys. Sol. Stat. B 251, 2193 (2014).

Charge transition level of GePb1 centers at interfaces of SiO2/GexSi1-x/SiO2 heterostructures investigated by positron annihilation spectroscopy

O. Madia, N. Segercrantz, V. Afanas’ev, A. Stesmans, L. Souriau, J. Slotte, F. Tuomisto, Phys. Stat. Sol. 251, 2211 (2014).