STRUCTURAL AND ELECTRONIC PROPERTIES OF OXYGEN-DEFICIENCY RELATED DEFECTS AT SEMICONDUCTOR INTERFACES AND IN THIN INSULATING LAYERS
WG4 members: Oreste Madia, Florin Cerbu, Jacek Kepa, Serena Iacovo, Valeri Afanasiev, Andre Stesmans, Michel Houssa
The Semiconductor Physics Laboratory has specialized in solid state interface spectroscopy on true atomic level. It represents an experimentally oriented research unit principally addressing semiconductor/insulator heterostructures and amorphous materials of reduced dimensions, with a main focus on relationship between interfacial electrical and structural properties.
Atomic model of interfacial Pb1 defect at a Si/oxide interface advanced on the basis of electron spin resonance (ESR) spectroscopy studies. Pink and green are Si and O atoms, respectively
The leading approach is synergetic combination of cutting-edge interface-specific experimental methods sensitive to local atomic structure, and both the extended and localized spectrum of electron states such as electron spin resonance, internal photoemission, and electron transport spectroscopies. A distinctive aspect of the laboratory entails the almost in situ symbiotic combination of top analyzing techniques of carriers, charges, and defects, thus providing the possibility to assess inherent structural aspects of nano-sized material on atomic scale, including both internal as well as interfacial properties.
